Powering Future Technology Nodes | PFTN semiconductor
Process and Device Simulation (TCAD)
TCAD and beyond for the hetero integration systems in the post-Moore era.
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Efficient DTCO for Faster Product Delivery
End-to-end collaboration from design to manufacturing
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Advanced Logic Technology Solutions
Path-finding and optimization for performance, power, area, cost and yield
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Total Ionizing Dose Effect in CMOS
Total Ionizing Dose (TID) effect is one of the prominent effects on irradiated semiconductor devices
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PFTN Appears at IDAS 2026: Anchoring the Scarce Value of China's Manufacturing-Oriented EDA with a “Virtual Fab”
September 1–2, 2026 – The 4th Intelligent Design Automation Summit (IDAS 2026) was held at the Zhangjiang Science Hall in Shanghai, where PFTN attended and officially released its TCAD-based virtual process platform
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Process and Device Simulation (TCAD)
TCAD and beyond for the hetero integration systems in the post-Moore era.
Lithography and OPC
Higher resolution, better fidelity and denser integration
Compact Modeling
Bridge between device and circuit design
Foundation IP
Readily available circuit building blocks
NEWS
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PFTN Appears at IDAS 2026: Anchoring the Scarce Value of China's Manufacturing-Oriented EDA with a “Virtual Fab”
September 1–2, 2026 – The 4th Intelligent Design Automation Summit (IDAS 2026) was held at the Zhangjiang Science Hall in Shanghai, where PFTN attended and officially released its TCAD-based virtual process platform
Mozz TCAD 2026.04 Released
The first TCAD suite in China to support complete 3D process and 3D device simulation
Total Ionizing Dose Effect in CMOS
Total Ionizing Dose (TID) effect is one of the prominent effects on irradiated semiconductor devices
